C2it storage bins

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The transport tube L12, in order from the side close to the first steam generating unitadiabatic transport pipeand a valve V is provided. Further, a third modification of the embodimentthe opening c formed in the second distributor plate c, the opening of the opening c formed in the third distribution plate c is smaller. As shown in FIG. Instead of the nitrogen gas, it is also possible to use other gases. Figure is a diagram showing a first modification of the embodiment Further, as shown in Figurethe prior art is the tournament, since the relative space of the last stage, uniformly gas is fed, problems of 1 to 4 can be solved. This may be avoided by making the axle spring constant harder by increasing the annular space pressure in the low load range. Year of fee payment : Similarly, by opening and closing the valves V, nitrogen gas flowing through the inlet pipe L, can be selectively either into the storage chamber R2 via the inlet pipe L, or blocking. Thus, it is possible to prevent deterioration of the conductance.

  • WOA1 Deposition head and deposition apparatus Google Patents
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    According to the deposition head variant 2 of Examplein each stage of the branch of the deposition material gas, by providing a partition member c, adjacent to each other in the same stage the second gas flow path c, between c it is possible to prevent the deposition material gas to be deployed flows together.

    WOA1 Deposition head and deposition apparatus Google Patents

    Lines 16 and 19 are connected to outlet connection T in the circuit illustrated in the schematic diagram. In Examplesan example of upright branches adjusting plate c from the third distribution plate c, is not limited thereto, the branch portion of the deposition material gas, for example, the second dispersion plate c It may be provided at a position corresponding to the opening c. As shown in Figurein the modified example 3, in the same manner as in Examplethe portion facing the central portion of the opening c of the third distribution plate c, fixing plate c is provided.

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    With this method, the 1task 2 it can be solved. The device according to claim 8wherein a deblocking control line 51 of a non-return valve 50 is connected to a control line 24 of non-return valves 1721 of the inlet line 16 and an inlet line

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    According to various aspects and embodiments of the present invention, the deposition head that can improve the uniformity of the deposition material gas flowing out from the flow path of the plurality of evaporation materials gas which is branched in a tournament shape is achieved.

    Opening c, c, c, the opening width in the direction intersecting the forward flow of the deposition material gas is formed to be constant along the forward direction of the flow of the deposition material gas.

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    In other words, the direction of the opening width c that intersects the flow direction of the evaporation material, the third distribution plate c, the flow direction of the vapor deposition material from the opening c-2 formed on the opposite side of the flow direction of the vapor deposition material narrowing along the direction towards the formed opening c Chemical vapor deposition apparatus and method comprising a shower head to adjust actively jet velocity of the reaction gas.

    Like the exhaust pipe L, discharge pipe L, L are respectively branched from the transport pipe L22, L Further, in the opening of each stage, providing branching adjustment means.

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    Simulation results of Figurein the deposition head, the respective branch portions of the deposition material gas, as a representative of the Examplein the case of adopting the branching adjustment plate c of the fourth modification of the embodiment the simulation results in half of the gas flow path from the center.

    Figure is a diagram showing a second modification of the embodiment In the following modification, both the aspect ratio of 0. Similarly, the gas from the third vapor generatorselectively, through a transport pipe L32 and L40 is supplied to the deposition head 16c, or may be discharged through the discharge pipe L and L After changes in load and subsequent measures regulating the level up or down, static load changes are corrected.

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    As an expanded feature of the present invention, the pilot pressure-regulating valve is for this reason equipped with an external reactive pressure pickup which permits compensation of the internal flow-through resistance in the case of small control blocks and thus results in the required accelerated pressure changes in the annular space.

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    C2it storage bins
    Further, the deposition material gas, in addition to the above-mentioned Alq3 molecular weight aboutalpha-NPD molecular weight aboutLiq molecular weight about can be a Spiro-2NPB molecular weight of about Furthermore, also transport tube L31, like the transport pipe L11, in this order from the side close to the third steam generatorthe valve Vadiabatic transport pipethe valve V, the 3MFC, and a valve V is provided.

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    As a result, according to the deposition head in Exampleit is possible to suppress the flow rate of the deposition material gas flowing into the opening c-1 side, the deposition material gas flowing out from the opening c-1 and the opening c-2 it can be adjusted in runoff evenly.

    Similarly, the second container out of the discharge pipe L between the discharge pipe L of the second storage containerthe heat insulating pipe is provided, the thermal insulation pipethe second storage container suppressing heat exchange between the exhaust pipe L outside the exhaust pipe L and the second container During the regulation procedure, the pressure in annular spaces 7 and 8 and in pressure accumulator 12 is regulated by two-stage pressure-regulating valve 20 at a load-dependent pressure level which is predetermined by pilot valve